Sputtering of silicon by low-energy oxygen bombardment studied by MD simulations
نویسندگان
چکیده
منابع مشابه
Production of ordered silicon nanocrystals by low-energy ion sputtering
We report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si ~100! substrate with 1.2 keV Ar ions at normal incidence. Atomic force and high-resolution transmission electron microscopies show that the silicon structures are crystalline, display homogeneous height, and spontaneously arrange into short-range hexagonal ordering. Under prolonged irradi...
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Absolute sputtering yields of liquid tin from 240 to 420 C due to irradiation by low-energy helium and deuterium have been measured. For ion energies ranging from 300 to 1000 eV, temperature enhancement of liquid tin sputtering was noted. These measurements were obtained by IIAX (the Ion-surface InterAction eXperiment) using a velocityfiltered ion beam at 45 incidence to sputter material from a...
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We measured the total sputtering yield Y of amorphous water ice at 80 K for 0.35–4 keV He and Ar ions. We found that Y depends linearly on the elastic stopping cross section at low energies as predicted by the standard linear cascade theory of sputtering. As the energy increases, a quadratic dependence with the electronic stopping cross section arises due to cooperative effects between excitati...
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Structural and sputtering effects of medium energy ion bombardment of silicon
Molecular dynamics simulation is used to study argon ion bombardment of an initially perfect silicon crystal up to its damaged state at a total fluence of 4· 10 impacts/cm. Lower and higher energy processes are considered: one process with ions at 500 eV and another process with ions at 700 eV, which are like those used in a particular microelectromechanical systems (MEMS) fabrication technique...
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ژورنال
عنوان ژورنال: Surface and Interface Analysis
سال: 2012
ISSN: 0142-2421
DOI: 10.1002/sia.4936